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SE1050W
LightChargerTM 10 Gb/s Transimpedance Amplifier Final
Applications
SONET/SDH-based transmission systems, test equipment and modules OC-192 fibre optic modules and line termination 10 Gigabit Ethernet Fibre Channel Serial data systems up to 10.7 Gb/s
Product Description
SiGe Semiconductor offers a portfolio of optical networking ICs for use in high-performance optical transmitter and receiver functions, from 155 Mb/s up to 12.5 Gb/s. SiGe Semiconductor's SE1050W is a fully integrated silicon bipolar transimpedance amplifier, providing wideband, low noise preamplication of signal current from a PIN photodetector. It features differential outputs. A decoupling capacitor on the supply is the only external component required. A system block diagram is shown after the functional description, on page 3. Noise performance is optimized for 10 Gb/s operation, with a calculated rms noise based sensitivity of -20 dBm for 10-10 bit error rate, using a detector with 0.20 pF capacitance and a responsivity of 0.9 A/W, with an infinite extinction ratio source.
Features
Single +5 V power supply Power dissipation = 430 mW (typ) Input noise current = 1.4 A rms when used with a 0.2 pF detector Transimpedance gain = 1.2 k into a 50 load (differential) Input current overload = 2.3 mA pk (+1.1 dBm for 0.9 A/W responsivity - meets 10 Gigabit Ethernet specification) Wide linear dynamic range of 17 dB (typ) 50 single-ended or 100 differential wire bond selectable outputs Bandwidth (-3 dB) = 9.8 GHz Operates at OC-192 / STM-64 up to 10.7 Gb/s NRZ rates Power supply rejection for both single ended and differential modes of operation Optimized for PIN photodetectors Minimal external components, supply decoupling only Operating junction temperature range = -40C to +100C Equivalent to Nortel Networks AE99

Ordering Information
Type SE1050W Package Bare Die Remark Shipped in Waffle Pack
Functional Block Diagram
VCC or +ve supply Bandgap Reference
SE1050 TzAmp 10 Gb/s
Input Current TZ_IN 1.29 V
Rf TzAmp Output Driver
5 0 50
OUTP OUTN
Power Supply Rejection
50
ACGND Wire bond option for single -ended operation
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Bondpad Diagram
GND 2 TZ_IN 3
GND 1
ACGND 13 12 OUTP
1
11
OUTN
Top View
4 GND
5 GND
6 GND
7 VCC1
8 VCC1
9 VCC2
10 VCC2
Bondpad Description
Pad No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Name GND GND TZ_IN GND GND GND VCC1 VCC1 VCC2 VCC2 OUTN OUTP ACGND Negative supply (0V). Negative supply (0V). Input pad (connect to photodetector anode). Negative supply (0V). Negative supply (0V). Negative supply (0V). Positive supply (+5 V). Positive supply (+5 V). Positive supply (+5 V) - Note: This is a separate supply for the output driver stage only. Positive supply (+5 V) - Note: This is a separate supply for the output driver stage only. Negative differential voltage output; leave unconnected for single-ended operation. Positive differential or single-ended voltage output. Bond option: Connected to external capacitor to ground for single-ended operation (recommended 1 nF); unconnected for differential operation. Description
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Functional Description Amplifier Front-End
The transimpedance front-end amplifies the current from a PIN photodetector, anode connected to pad TZ_IN, to produce a differential output voltage with the feedback resistor Rf determining the level of amplification (see the functional block diagram on page 1). The input pad TZ_IN is biased at nominally 1.29 V above ground, allowing the photodetector to have a wide reverse-bias by connecting the cathode to VCC. This enables single rail operation and normally ensures that the PIN operates in its c onstant, lowcapacitance region. The output stage has its own supply connection VCC2 (+5 V) to maintain integrity of the high-speed signal path. The output stage shares the GND (0 V) connection with the remainder of the circuitry, which has a separate supply connection VCC1 (+5 V). The output can be configured in a differential or single-ended mode. For differential operation, the pad ACGND is not wire bonded and the circuit provides a fully balanced 100 output, on the pins OUTP and OUTN. For single-ended operation, the ACGND pad is required to be wire bonded to an external capacitor to ground (recommend 1 nF). Under these circumstances, OUTP operates as a single-ended 50 output. In both cases, increasing optical input level gives a positive-going output signal on the OUTP pin.
Power Supply Rejection
An on-chip power supply rejection circuit is used to achieve both single-ended and differential rejection from the +5 V VCC rail. This rejection ensures that performance is not degraded by noise on the power supply. The circuit achieves a power supply rejection on the outputs of 38 dB for single-ended and 24 dB for differential operation, up to 100 kHz. The use of external decoupling will help to remove any unwanted signals at higher frequencies.
Output Driver Stage
The output driver acts as a buffer stage, capable of swinging up to 1.1 V pk-pk differential into a 100 load.
System Block Diagram
Data Laser Driver
Mux Ck In
SE1150/51/52
Receiver Module Data CDR & Demux Clock LOS
SE1250
2 Post Amplifier 2
SE1050W
TZ Amplifier
PIN
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Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below. Symbol VCC VIO IIO IIO VESD VESD Tstg Supply Voltage Voltage at any input or output Current sourced into any input or output except TZ_IN Current sourced into pin TZ_IN Electrostatic Discharge (100 pF, 1.5 k) except TZ_IN and ACGND Electrostatic Discharge (100 pF, 1.5 k) pins TZ_IN and ACGND Storage Temperature Parameter Min -0.7 -0.5 -20 -5 -2 -0.25 -65 Max 6.0 VCC+0.5 20 5 2 0.25 150 Unit V V mA mA kV kV C
Recommended Operating Conditions
Symbol VCC Tj Supply Voltage Operating Junction Temperature Parameter Min 4.7 -40 Typ 5.0 Max 5.3 100 Unit V C
DC Electrical Characteristics
Symbol ICC Vin Vout Rout Supply Current Input Bias Voltage Output Bias Voltage Output Resistance 38 1.28 Parameter Min Typ 86 1.29 3.0 50 62 Max 130 1.34 Unit mA V V
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AC Electrical Characteristics
Symbol BW (3dB) Tz Dri Voutmax Flf PSRR PSRR Olim DR lOL Pol Nrms Parameter Small Signal Bandwidth at -3dB point Differential Transimpedance (50 on each output, f = 100 MHz) Input Data Rate Maximum Differential Output Voltage Low Frequency Cut-off Power Supply Rejection Ratio (differential) up to 100 kHz Power Supply Rejection Ratio (single-ended) up to 100 kHz Onset of Limiting (mean input current from photodetector) Linear Dynamic Range (sensitivity to onset of limiting) Input Current before overload (10 Gb/s NRZ data) Optical Overload Input Noise Current (in 10 GHz) 2300 +1.1 1.4 2.0 16 30 290 37 24 38 460 17 Min 8 0.75 Typ 9.8 1.2 Max 13 1.8 10.7 1.1 47 Unit GHz k Gb/s V pk-pk kHz dB dB A mean dB A pk-pk dBm A rms
DC and AC electrical characteristics are specified under the following conditions: Supply Voltage (VCC).........................................4.7 V to 5.3 V Junction Temperature (Tj)..................................-40C to 100C Load Resistor (RL)...............................................50 AC coupled via 100 nF, for each output Photodetector Capacitance (Cd)......................0.2 pF Input bond wire inductance (Li) ........................1.1 nH (Must comply with recommended bonding arrangement that will be provided as an application note) Photodetector responsivity ................................0.9 A/W Photodetector series resistance........................10 max Transimpedance (Tz) measured with 0 > lin < 580 A pk-pk, at 100 MHz
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Bondpad Configuration
The bondpad center coordinates are referenced to the center of the lower left pad (pad 4). All dimensions are in microns (m). X Coordinate (m) 234.9 121.7 0 0 116.5 233.5 365.2 480.2 693.0 808.0 808.0 808.0 619.9 Y Coordinate (m) 658.0 658.0 510.3 0 0 0 0 0 0 0 418.9 537.3 658.0
Pad No. 1 2 3 4 5 6 7 8 9 10 11 12 13
Name GND GND TZ_IN GND GND GND VCC1 VCC1 VCC2 VCC2 OUTN OUTP ACGND
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The diagram below shows the bondpad configuration of the SE1050W Transimpedance Amplifier. Note that the diagram is not to scale. All bondpads are 92 m x 92 m with a passivation opening of 82 m x 82 m. All VCC and GND pads must be bonded to minimize inductive effects. Mechanical die visual inspection criteria per MIL-STD-883 Method 2010.10 Condition B Class Level B.
121.7 113.2
385.0
188.1
147.7
510.3
Top View
116.5 117.0 131.7 115.0 212.8 115.0
904.0
1053.0
Side View
All Dimensions in Microns (m)
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250.0
418.9
118.4 120.7
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Applications Information
For optimum performance it is recommended that the device be used in differential mode with the circuit shown in the first diagram below. All VCC and GND pads must be wire bonded to ensure correct high frequency performance. Connections for differential operation:
+5 V PIN Bias 1 nF min 9 10 78 VCC1 1 nF min
VCC2
3 PIN
TZ_IN
TZ Amplifier SE1050W
GND
OUTP OUTN ACGND 13
12 11 To 50 O loads, AC coupled
1
2
4
5
6
NC 0V
Connections for single ended operation:
+5 V PIN Bias 1 nF min 9 10 7 8 1 nF min To 50 O load, AC coupled
VCC2
VCC1
3 PIN
TZ_IN
TZ Amplifier SE1050W
GND
OUTP OUTN ACGND
12 11
NC
1
2
4
5
6
13 1 nF min
0V
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As a guide to the effect of bondwire length on inductance, the table below gives some examples of observed inductance per millimeter for popular gold bondwire diameters. The effect of input bondwire inductance on Bandwidth, Input Referred Noise and Gain Peak, is shown in the graphs below.
Bondwire diameter (m) 25 30 32
Inductance per mm (nH) 0.81 0.77 0.76
Bandwidth vs Input Bondwire Inductance Differential Mode of Operation 11
10 Bandwidth (GHz)
Cpin = 0.2 pF 9
8
Cpin = 0.25 pF
7 0.5 0.7 0.9
1.1
1.3
1.5
Input Inductance (nH)
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Input Referred Noise vs Input Bondwire Inductance Differential Mode of Operation 1.7
1.6 Input Referred Noise (uA)
1.5 Cpin = 0.2 pF
1.4 Cpin = 0.25 pF
1.3
1.2 0.5 0.7 0.9
1.1
1.3
1.5
Input Inductance (nH)
Gain Peak vs Input Bondwire Inductance Differential Mode of Operation 4.0
3.0
Gain Peak (dB)
2.0 Cpin = 0.25 pF
Cpin = 0.2 pF 1.0
0.0
0.5
0.7
0.9
1.1
1.3
1.5
Input Inductance (nH)
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Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor reserves the right to change information at any time without notification. Preliminary The datasheet contains information from the design target specification. SiGe Semiconductor reserves the right to change information at any time without notification. Final The datasheet contains information from the final product specification. SiGe Semiconductor reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an "as is" basis. SiGe Semiconductor Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor Inc. LightChargerTM trademark is owned by SiGe Semiconductor. Copyright 2002 SiGe Semiconductor All Rights Reserved
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